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A Product Line of
Diodes Incorporated
DMP31D0UFB4
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±8
Unit
V
V
Continuous Drain Current
Pulsed Drain Current (Note 5)
Steady
State
T A = 25°C (Note 5)
T A = 85°C (Note 5)
T A = 25°C (Note 4)
I D
I DM
-0.76
-0.55
-0.54
2
A
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P D
R θ JA
0.46
0.92
271
136
W
°C/W
Operating and Storage Temperature Range
T J , T STG
-55 to +150
°C
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
10
9
R θ JA(t) (t) * R θ JA
8
7
6
5
4
3
2
1
0
0.001
Single Pulse
R θ JA = 262 ° C/W
=r
T J - T A = P * R θ JA(t)
0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.9
R θ JA (t) = r(t) * R θ JA
R θ JA = 262°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001 0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 2 Transient Thermal Resistance
DMP31D0UFB4
D atasheet number: DS35587 Rev. 1 - 2
2 of 7
www.diodes.com
January 2012
? Diodes Incorporated
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